Hostname: page-component-77c89778f8-n9wrp Total loading time: 0 Render date: 2024-07-20T11:29:14.059Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Wurtzite-and Zincblende-GaN Films Grown by RF Plasma-MBE

Published online by Cambridge University Press:  21 February 2011

F. Semendy ,
N. Bambha ,
J.G. Kim ,
H. Liu  and
R.M. Park
F. Semendy
Affiliation:
Army Research Laboratory, Fort Belvoir, VA 22060, fsemendy@nvl.army.mil
N. Bambha
Affiliation:
Army Research Laboratory, Fort Belvoir, VA 22060, fsemendy@nvl.army.mil
J.G. Kim
Affiliation:
Department of Material Science and Engineering, University of Florida, FL 32611
H. Liu
Affiliation:
Department of Material Science and Engineering, University of Florida, FL 32611
R.M. Park
Affiliation:
Department of Material Science and Engineering, University of Florida, FL 32611
Get access

Abstract

Both wurtzite-and zincblende-GaN films have been grown on sapphire and MgO substrates, respectively, and examined by photoluminescence and x-ray analysis. GaN films were grown on suitably prepared Al2O3 and MgO substrates by molecular beam epitaxy employing a rf plasma discharge, nitrogen free radical source. The wurtzite-and zincblende-GaN films exhibited dominant near band-edge emission, the nature of which will be compared and contrasted for both phases in this paper. X-ray diffraction data for both phases will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 547
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Petalas, J., Logothetidis, S., Boultadakis, S., Alouani, M., and Wills, J.M., Phys.Rev, B 52, 8082 (1995)Google Scholar
2 Dingle, B., Sell, D.D., Stokowski, S.E., and Ilegems, M., Phys. Rev, B 4, 1211 (1971)Google Scholar
3 Okumura, H., Yoshida, Y., and Okahisa, T., Appl. Phys. Lett. 64, 2997 (1994)Google Scholar
4 Powell, R.C., Lee, N.E., Kim, Y.W., and Greene, J.E., J. Appl. Phys. 73, 189 (1993)Google Scholar
5 Sitar, Z., Paisley, M.J., Ruan, J., Choyke, J.W., and Davis, R. F., J. Mater. Sci. Lett., 11, 261 (1992)Google Scholar
6 -Flores, G.R, Navarro-Contreras, H., Lastras-Martinez, A., Powell, R.C., and Greene, J.E., Phys. Rev B 50, 8433 (1994)Google Scholar
7 Powell, R.C., Tomasch, G.A. Kim, Y.W., Thornton, J.A., and Greene, J.E., MRS Symposia Proceeedings No. 162, 525, (1990)Google Scholar
8 Strite, S., Ruan, J. Li, Z., Salvador, A., Chen, H., Smith, D.J., Choyke, W.J., and Morkoc, H., J. Vac. Sci. Technol. B 9, 1924 (1991)Google Scholar
9 Liu, H., Frenkel, A.C., Kim, J. G., and Park, R. M., J. Appl. Phys. 74, 6124 (1993)Google Scholar
10 Min, B.J., Chan, C.T., and Ho, K.M., Phys. Rev. B 45, 1159 (1992)Google Scholar