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Optimization of Stressor Layers Created by ClusterCarbon™ Implantation

Published online by Cambridge University Press:  01 February 2011

Karuppanan Sekar ,
Wade A Krull  and
Thomas N Horsky
Karuppanan Sekar
Affiliation:
ksekar@semequip.com, SemEquip Inc, Process Technology, 34 Sullivan Rd, North Billerica, MA, 01862, United States, 978-262-3628, 978-262-0950
Wade A Krull
Affiliation:
wkrull@semequip.com, SemEquip Inc, Process Technology, 34 Sullivan Rd, North Billerica, MA, 01862, United States
Thomas N Horsky
Affiliation:
thorsky@semequip.com, SemEquip Inc, Technology Group, 34 Sullivan Rd, North Billerica, MA, 01862, United States
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Abstract

Si:C layers are interesting candidates as stressor layers for NMOS transistors. Growth of such a Si:C layer has been realized by an expensive epitaxial growth process for devices to produce tensile strain in the channel, leading to enhanced mobility and device performance. Use of a monomer carbon ion implant in conjunction with a Ge pre-amorphizing implant (Ge-PAI) in Si is an alternative, lower cost approach to obtaining such SiC layers. This approach has not yielded desired device performance owing to low carbon substitutionality [C]sub, and also the presence of end-of-range (EOR) defects and large leakage currents due to the Ge-PAI implant. In this study we will show the formation of a Si:C layer using a ClusterCarbon approach that creates self-amorphization in Si thus avoiding an extra Ge-PAI implant step. We show that more than 2% substitutional carbon can be realized by using solid-phase-epitaxial-regrowth (SPER) and millisecond anneal. Si:C layers are characterized by using High Resolution X-ray Diffraction (HRXRD) and SIMS techniques.

Keywords

ion-implantationx-ray diffraction (XRD)stress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E04-08
Copyright
Copyright © Materials Research Society 2008

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References

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