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Optimized Molecular Beam Epitaxy Structures for GaAs on Silicon Photodetectors

Published online by Cambridge University Press:  21 February 2011

A. Christou ,
N.A. Papanicolaou  and
G.W. Anderson
A. Christou
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
N.A. Papanicolaou
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
G.W. Anderson
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375-5000
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Abstract

Two dimensional growth of GaAs on silicon has been achieved by modulation molecular beam epitaxy (where the arsenic beam is pulsed) with laser assistance at 308 nm (LAMBE). Photoconductive, low doping concentration layers were utilized for metal-semiconductormetal photodetectors which were evaluated at 840 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 371
Copyright
Copyright © Materials Research Society 1990

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References

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