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Oscillatory Temperature-driven Morphological Relaxation of Surface Ripple Using Weak Pulsed Laser

Published online by Cambridge University Press:  01 February 2011

Mikhail Khenner*
Affiliation:
mkhenner@nsm.buffalo.edu, State University of New York at Buffalo, Mathematics, 240 Math Bldg., Buffalo, NY, 14260, United States, 716 645-6284 ext.143
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Abstract

A continuum (Mullins-type) model is proposed for the non-isothermal, isotropic evolution of a crystal surface on which mass transport occurs by surface diffusion. The departure from constant temperature is assumed induced by low-energy incident pulsed radiation. It has been previously shown experimentally and theoretically that such heating mode gives rise to the quasistationary regime, in which the surface temperature of a thick solid film oscillates about the mean value with the pulse repetition frequency. The implications of oscillatory driving with high frequency values on relaxation of surface ripple are examined; in particular, the traveling wave solutions with decreasing amplitude are detected numerically. Pulsed heating also results in faster smoothing of the ripple, compared to the case when the surface is at constant temperature which is same as the mean temperature in the pulsed heating mode. Impact on ripple shape is minor for ripple amplitudes considered.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

[1] Zhang, C., Kalyanaraman, R., Appl. Phys. Lett. 83(23), 48274829 (2003).Google Scholar
[2] Zhang, C., Kalyanaraman, R., J. Mater. Res. 19(2), 595599 (2004).Google Scholar
[3] Zhang, W., Zhang, C., Kalyanaraman, R., Mater. Res. Soc. Symp. Proc. 849, 5357 (2005).Google Scholar
[4] Zhang, C., PhD Thesis, Dept. of Physics, Washington University, St. Louis, June 2004.Google Scholar
[5] Pierre-Louis, O., Haftel, M.I., Phys. Rev. Lett. 87(4), 048701 (2001).Google Scholar
[6] Mullins, W.W., J. Appl. Phys. 30, 77 (1959).Google Scholar
[7] Mullins, W.W., J. Appl. Phys. 28(3), 333 (1957).Google Scholar
[8] Cahn, J.W., Taylor, J.E., Acta. Metall. Mater. 42, 1045 (1994).Google Scholar
[9] Yakunkin, M.M., High Temperatures 26(4), 585 (1988).Google Scholar
[10] Yilbas, B.S., Kalyon, M., J. Phys. D: Appl. Phys. 34, 222 (2001).Google Scholar
[11] Brueck, S.R.J., Ehrlich, D.J., Phys. Rev. Lett. 48(24), 1678 (1982).Google Scholar
[12] Guosheng, Z., Fauchet, P.M., Siegman, A.E., Phys. Rev. B 26(10), 5366 (1982).Google Scholar
[13] Kerr, N.C., Omar, B.A., Clark, S.E., Emmony, D.C., J. Phys. D: Appl. Phys. 23, 884 (1990).Google Scholar
[14] Khenner, M., Phys. Rev. E 72, 011604 (2005).Google Scholar
[15] Hairer, E., Wanner, G., J. Comput. Appl. Math. 111, 93 (1999).Google Scholar