Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-18T10:37:48.419Z Has data issue: false hasContentIssue false
  • English
  • Français

Out Diffusion of Oxygen in Czochralski Silicon at Low Temperatures

Published online by Cambridge University Press:  10 February 2011

S.A. McQuaid ,
B.K. Johnson ,
D. Gambaro ,
R. Falster ,
M. Ashwin  and
R.C. Newman
S.A. McQuaid
Affiliation:
MEMC Electronic Materials Inc., 501 Pearl Dr., PO Box 8, St. Peters, MO 63376smcquaid@memc.com
B.K. Johnson
Affiliation:
MEMC Electronic Materials Inc., 501 Pearl Dr., PO Box 8, St. Peters, MO 63376
D. Gambaro
Affiliation:
MEMC Electronic Materials SpA, Viale Gherzi 31, 1-28100 Novara, Italy
R. Falster
Affiliation:
MEMC Electronic Materials SpA, Viale Gherzi 31, 1-28100 Novara, Italy
M. Ashwin
Affiliation:
Semiconductor IRC, Imperial College, Prince Consort Rd., London SW7 2BZ, UK
R.C. Newman
Affiliation:
Semiconductor IRC, Imperial College, Prince Consort Rd., London SW7 2BZ, UK
Get access

Abstract

Previously reported measurements of anomalously high rates of oxygen out-diffusion in Czochralski silicon at low temperatures (T≤450°C) are confirmed. The surface concentration is shown to decrease with increasing time while the depth to which the concentration is depleted remains constant. Exposure to a hydrogen plasma under conditions known to catalyse the diffusion of isolated oxygen atoms causes an increased rate of decrease of the surface concentration without significantly affecting the depth to which the concentration is depleted. The evolution of the out-diffusion profiles cannot be explained by a catalytic mechanism operating on the isolated oxygen atoms. A slow conversion of Oi to a complex containing oxygen which can diffuse rapidly over long distances before being trapped either on the surface or in the bulk of the sample can account for both out-diffusion and simultaneous loss of [Oi] in the bulk. The conversion rate is enhanced by exposure to a hydrogen plasma, indicating that it is controlled by the diffusion rate of isolated atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 389
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lee, S.-T., and Nichols, D., Mat. Res. Soc. Symp. Proc. 59 31 (1986).Google Scholar
2. Mikkelsen, J.C. Jr, Mat. Res. Soc. Symp. Proc. 59 19 (1986).Google Scholar
3. Lee, S.-T. and Fellinger, P., Appl.Phys.Lett. 49 1793 (1986).Google Scholar
4. Lee, S.-T., Fellinger, P. and Chen, S., J.Appl.Phys. 63 1924 (1988).Google Scholar
5. Gösele, U., Ahn, K.-Y., Marioton, B.P.R., Tan, T.Y. and Lee, S.-T., Appl. Phys. A48 219 (1989).Google Scholar
6. Tokuda, Y., Katayama, M. and Hattori, T., Semicond.Sci.Technol. 8 163 (1993);Google Scholar
7. Tokuda, Y., Shimokata, T., Katayama, M. and Hattori, T., Mater. Res. Soc. Proc. 262 75 (1992).Google Scholar
7. Wijaranakula, W., J.Appl.Phys. 68 6538 (1990).Google Scholar
8. McQuaid, S.A., Binns, M.J., Londos, C.A., Tucker, J.H., Brown, A.R. and Newman, R.C., J.Appl.Phys. 77 1427 (1995).Google Scholar
9. Newman, R.C., Tucker, J.H., Brown, A.R. and McQuaid, S.A., J.Appl.Phys. 70 3061 (1991).Google Scholar
10. Corbett, J.W., Watkins, G.D. and McDonald, R.S., Phys.Rev. 135, A1381 (1964)Google Scholar