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The Outdiffusion of Boron and Arsenic from Pre-Formed Ion-Beam-Mixed Cobalt Disilicide Layers using Rapid Thermal Processing

Published online by Cambridge University Press:  25 February 2011

P. B. Moynagh ,
A. A. Brown  and
P. J. Rosser
P. B. Moynagh
Affiliation:
STC Technology Ltd., London Rd., Harlow, Essex, England, CM17 9NA
A. A. Brown
Affiliation:
STC Technology Ltd., London Rd., Harlow, Essex, England, CM17 9NA
P. J. Rosser
Affiliation:
STC Technology Ltd., London Rd., Harlow, Essex, England, CM17 9NA
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Abstract

Arsenic out-diffusing from Cobalt Disilicide into underlying silicon displays an enhanced activation level of up to 80%, and an enhanced diffusivity of greater than one order of magnitude. Boron, in contrast, displays a diffusivity as small as 0.25 times that expected. These observations are consistent with a considerable Si-vacancy injection by the silicide layer into the underlying substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 261
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Shone, F. C., Saraswat, K. C. & Plummer, J. D., IEDM 85, p. 407, (1985)Google Scholar
2. Hill, C. & Jones, S., Properties of Silicon, p.933–84, (INSPEC, London, 1988)Google Scholar
3. Moynagh, P. B. & Rosser, P. J., Properties of Silicon, p.348–67, (INSPEC, London, 1988)Google Scholar
4. Fahey, P. & Dutton, R. W., Semiconductor Silicon, p.571–82, edited by Huff, H. R., Abe, T. & Kolbesen, B., (E.C.S., Pennington, N.J., 1986)Google Scholar
5. Stanford University / Technology Modelling Associates, SUPREM 3 process modelGoogle Scholar