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Oxidation Behavior of Pd-Si Compounds

Published online by Cambridge University Press:  15 February 2011

A. Cros ,
R. A. Pollak  and
K. N. Tu
A. Cros*
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
R. A. Pollak
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
K. N. Tu
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, (U.S.A.)
*
† Present address: Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Abstract

The room temperature oxidation of PdSi, Pd2Si and Pd4Si has been studied using X-ray photoelectron spectroscopy (X-ray photoemission spectroscopy or electron spectroscopy for chemical analysis). We find that only silicon atoms in these silicides are oxidized and the oxidation of Pd4Si surfaces is enhanced compared with that of Pd2Si and PdSi, as is evidenced by both a higher silicon oxidation state and thicker oxide films. This behavior is discussed in terms of silicide stability and a spillover effect where palladium atoms catalyze molecular oxygen dissociation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 221
Copyright
Copyright © Materials Research Society 1982

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References

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