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Oxidation of Si1−xGex Alloys at Elevated Pressure

Published online by Cambridge University Press:  15 February 2011

Christine Caragianis ,
David C. Paine ,
Alan F. Schwartzman  and
Yuzo Shigesato
Christine Caragianis
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
David C. Paine
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
Alan F. Schwartzman
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
Yuzo Shigesato
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
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Abstract

Thermal passivation of Si1−xGex (x=10 at.%) using dry high pressure (>700 atm) and hydrothermal (>500 atm) oxidation (HPO) was studied. Alloys of Si1−xGex approximately 200 nm thick were oxidized using three processes: (i) dry oxygen at 700 atm and at a temperature of 550°C, (ii) hydrothermal at 510 atm and 550°C, and (iii) conventional 1 atm at 800°C. Auger sputter depth profiling (AES), X-ray photoelectron spectroscopy (XPS), and Raman Spectroscopy were used to characterize the oxides. AES and Raman studies reveal that both dry high pressure and hydrothermal oxidizing conditions produce compositionally congruent oxides from Si90Ge10, multicomponent alloys. XPS studies were used to establish that the Ge in these oxides is chemically incorporated. Thermodynamic and kinetic considerations of the Si-Ge-O system are discussed for both HPO and conventional oxidation. The metastable nature of the HPO oxides is confirmed by examining the microstructure of annealed oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 251: Symposium S – Pressure Effects on Materials Processing and Design , 1991 , 65
Copyright
Copyright © Materials Research Society 1992

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References

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