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Oxygen Deficiency and Vacancy Formation in LSCO/PLZT/LSCO Capacitors

Published online by Cambridge University Press:  10 February 2011

T. Friessnegg ,
B. Nielsen ,
V. J. Ghosha ,
S. Aggarwal ,
D. J. Keeble ,
E. H. Poindexter  and
R. Ramesh
T. Friessnegg
Affiliation:
Department of Materials Science and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
B. Nielsen
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973
V. J. Ghosha
Affiliation:
Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973
S. Aggarwal
Affiliation:
Department of Materials Science and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
D. J. Keeble
Affiliation:
Carnegie Laboratory of Physics, University of Dundee, Dundee DDI 4HN, United Kingdom
E. H. Poindexter
Affiliation:
Army Research Laboratory, Adelphi, Maryland 20783
R. Ramesh
Affiliation:
Department of Materials Science and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
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Abstract

Vacancy type defects in La0.5 Sr0.5CoO3/Pb0.9La0.1Zr0.2 Ti0.8/La0.5Sr0.5CoO3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 393
Copyright
Copyright © Materials Research Society 2000

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