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Oxygenated and Fluorinated Amorphous Silicon Nitride Films and their Use in Thin Film Transistors

Published online by Cambridge University Press:  25 February 2011

P. K. Bhat ,
H. Ogura  and
A. Madan
P. K. Bhat
Affiliation:
Glasstech Solar, Inc., (GSI) 12441 West 49th Avenue, Wheatridge, Colorado 80033 U.S.A.
H. Ogura
Affiliation:
Asahi Glass Co., Ltd., 1-2 Marunouchi 2-Chome, Chiyoda-ku, Tokyo, 100 JAPAN
A. Madan
Affiliation:
Glasstech Solar, Inc., (GSI) 12441 West 49th Avenue, Wheatridge, Colorado 80033 U.S.A.
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Abstract

We present a comparison of the properties of films of amorphous silicon nitride, amorphous silicon oxynitride, and amorphous fluorinated silicon nitride deposited by plasma enhanced chemical vapor deposition. The properties of fluorinated silicon nitride films degrade when exposed to air. TFT devices fabricated with silicon nitride and silicon oxynitride insulators show thteshold voltages ≤3 V and source drain current ON/OFF ratios exceeding 107 for gate voltages smaller than 20 V, whereas TFTs with fluorinated silicon nitride insulators show an inferior performance. We also present ideas on the possible relation between the stress in the insulator film and the reliability of TFTs fabricated using these layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 253
Copyright
Copyright © Materials Research Society 1989

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References

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