Article contents
Passivation of Zn-Acceptors in InGaAs During Rie with CHF3/H2 and CH4/H2
Published online by Cambridge University Press: 25 February 2011
Abstract
Reactive ion etching of highly Zn-doped InGaAs with hydrogen-containing gases such as CHF3/H2, CH4/H2 and CH4/He leads to a drastical reduction of the concentration of electrically active acceptors in a near-surface layer. Ti/Pt/Au contacts applied on as-treated p++-InGaAs layers show non-ohmic I/V-characteristics due to this passivation effect. Annealing at moderate temperatures (330°C, 20 minutes) was found to restore full electrical activity.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1990
References
- 1
- Cited by