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Pd/Au:Be Ohmic Contacts to p-Type GaAs

Published online by Cambridge University Press:  25 February 2011

K.M. Schmitz ,
K.L. Jiao ,
R. Sharama ,
W.A. Anderson ,
G. Rajeswaran ,
L.R. Zheng ,
M.W. Cole  and
R.T Lareau
K.M. Schmitz
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, NY 14260
K.L. Jiao
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, NY 14260
R. Sharama
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, NY 14260
W.A. Anderson
Affiliation:
Center for Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Buffalo, NY 14260
G. Rajeswaran
Affiliation:
Corporate Research Laboratory, Eastman Kodak Company, Rochester, NY 14650
L.R. Zheng
Affiliation:
Corporate Research Laboratory, Eastman Kodak Company, Rochester, NY 14650
M.W. Cole
Affiliation:
U.S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703
R.T Lareau
Affiliation:
U.S. Army Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703
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Abstract

Stable, low resistance ohmic contacts to p-type GaAs were studied for use in semiconductor laser applications. Comparison was made between Cr/Au, Au:Be and Pd/Au:Be metallizations. Regions of P+ were formed in N-type GaAs by a spin-on source which was rapid diffused at 950°C for 6s. Surface doping of 2×1020/cm3 and junction depth of 0.4 μm were determined by SIMS, groove and stain, and electrochemical profile. Metallizations were accomplished by thermal evaporation with a base pressure of 3×10-6 Torr. Sintering of the metallizations was done by furnace or RTA at 350°C. This sintering temperature was selected after RBS studies predicted an absence of significant interdiffusion. Pd/Au:Be yielded the best result of 0.3 μΩ-cm2 based upon transmission line, cross-bridge Kelvin and van der Pauw studies. A layer of BeO was revealed on the surface of Au:Be contacts by Auger studies. Cross-section TEM studies on Pd/Au:Be revealed a uniform layer of alloyed Ga-Au with an absence of spiking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 993
Copyright
Copyright © Materials Research Society 1990

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