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Peak-To-Peak Voltage (Vp-p) on Rf Powered-Electrode and Sensitivity of Amorphous Silicon (A-Si) Photoreceptor

Published online by Cambridge University Press:  25 February 2011

Toshinori Yamazaki ,
Nobuaki Kobayashi ,
Satoshi Takahashi  and
Tatsuo Nakanishi
Toshinori Yamazaki
Affiliation:
Copier Supplies Division, Konica Corporation No. 2970, Ishikawa-chou, Hachiooji-shi, 192 Tokyo, Japan
Nobuaki Kobayashi
Affiliation:
Copier Supplies Division, Konica Corporation No. 2970, Ishikawa-chou, Hachiooji-shi, 192 Tokyo, Japan
Satoshi Takahashi
Affiliation:
Copier Supplies Division, Konica Corporation No. 2970, Ishikawa-chou, Hachiooji-shi, 192 Tokyo, Japan
Tatsuo Nakanishi
Affiliation:
Copier Supplies Division, Konica Corporation No. 2970, Ishikawa-chou, Hachiooji-shi, 192 Tokyo, Japan
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Abstract

It has been found that photosensitivity of amorphous silicon (a-Si) photoreceptor fabricated by g1ow-discharge decomposition of SiH4 – B2H6 – Ar has specific relation to peak-to-peak value of Rf (13.5 MHz) voltage (Vp - p) and DC bias voltage (Vdc) on the Rf powered-electrode. The lower the Vp - p value is depressed, the higher the photosensitivity is improved. Dependences of the Vp - p value on deposition parameters such as gas pressure, distance between Rf powered-e1ectrode and aluminum substrate, Rf electric power and dilution ratio of SiH4 to Ar seem to indicate correlation of Vp - p with electron energy and electron density in the plasma.

Furthermore, the Vp - p and Vdc values have been measured in plasma of He, Ne (rare-gases with no Ramsauer effect), Ar, Kr, Xe (rare-gases with Ramsauer effect), and H2, N2, CH4, SiH4 (molecular-gases): Specific behaviors in Vp - p and Vdc seem to have correlation with collision cross - sections of electrons (with the energy of 2 ∼ 10 eV) in these gases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 435
Copyright
Copyright © Materials Research Society 1990

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References

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