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Pendeo Epitaxy Of 3C-SiC on Si Substrates

Published online by Cambridge University Press:  15 March 2011

G.E. Carter ,
T. Zheleva ,
G. Melnychuck ,
B. Geil ,
K. Jones  and
S. E. Saddow
G.E. Carter
Affiliation:
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, Mississippi State, MS 39762-9571
T. Zheleva
Affiliation:
Sensors and Electron Devices Directorate, Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783-1197
G. Melnychuck
Affiliation:
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, Mississippi State, MS 39762-9571
B. Geil
Affiliation:
Sensors and Electron Devices Directorate, Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783-1197
K. Jones
Affiliation:
Sensors and Electron Devices Directorate, Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783-1197
S. E. Saddow
Affiliation:
Emerging Materials Research Laboratory, Department of Electrical & Computer Engineering, Mississippi State, MS 39762-9571
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Abstract

Pendeo Epitaxy is a type of Lateral Epitaxial Overgrowth (LEO) that instead of using a dielectric buffer layer, uses an etched substrate to grow laterally without an interface layer. We report the first successful growth of 3C-SiC on Si using Pendeo epitaxy. Rectangular stripes of 3C-SiC on (100) Si substrates were fabricated, along both the [110] and [100] directions. Pendeo epi was only observed for columns parallel to [001], indicating a preferred growth facet for Pendeo epi of 3C-SiC on Si. SEM and TEM investigations were performed to assess the material quality of the Pendeo 3C-SiC material. Films were grown for 60 min at 1310°C and film coalescence was achieved without evidence of voids where the growth fronts joined. TEM data indicate not only the growth of vertical and lateral 3C-SiC on the 3C-SiC seed layer but direct nucleation of 3C-SiC on the exposed Si columns side wall and trench bottom, despite the lack of a carbonization procedure. The quality of the Pendeo 3C-SiC film appears to be of high quality indicating that Pendeo epi of 3C-SiC on low-cost, large-diameter Si substrates may prove to be a cost effective way to grow device-grade SiC layers on Si substrates for device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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