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Pendeo-Epitaxial Growth of GaN on SiC and Silicon Substrates via Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

K. J. Linthicum ,
T. Gehrke ,
D. Thomson ,
C. Ronning ,
E. P. Carlson ,
C. A. Zorman ,
M. Mehregany  and
R. F. Davis
K. J. Linthicum
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
T. Gehrke
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
D. Thomson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
C. Ronning
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
E. P. Carlson
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
C. A. Zorman
Affiliation:
Department of Electrical, Systems and Computer Engineering and Science, Case Western Reserve University, Cleveland, OH 44106
M. Mehregany
Affiliation:
Department of Electrical, Systems and Computer Engineering and Science, Case Western Reserve University, Cleveland, OH 44106
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27965
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Abstract

Pendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (011) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited ∼0.2° crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H-SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM ∼ 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM ∼ 4 meV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 307
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Nam, O., Zheleva, T., Brcmser, M., and Davis, R., Appi. Phys. Lett., 71, 2638(1997).10.1063/1.120164Google Scholar
2. Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett., 73,481 (1998). 31210.1063/1.121907Google Scholar
3. Marchand, H., Wu, X., lbbetson, J., Fini, P., Kozodoy, P., Keller, S., Speck, J., Denbaars, S., and Mishra, U., Appl. Phys. Lett., 73,747 (1998).10.1063/1.121988Google Scholar
4. Zhong, H., Johnson, M., McNulty, T., Brown, J., Cook, J. Jr, Schezina, J., Materials Internet Journal, Nitride Semiconductor Research, 3, 6, (1998).Google Scholar
5. Nakamura, , Senoh, M., Nagahama, S., Iwasa, N., Yamanda, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., and Chocho, K., Proc. of the 2 “d Int. Conf. On Nitride Semicond., Tokushima, Japan, October, 1997 Google Scholar
6. MRS Internet Journal of Nitride Semiconductor Research, January 13, 1999 Google Scholar
7. Linthicum, K. J., Gehrke, T., Thomson, D.B., Carlson, E.P., Rajagopal, P., Smith, T., and Davis, R.F., (submitted to Applied Physics Letters)Google Scholar
8. Linthicum, K. J., Gehrke, T., Thomson, D.B., Tracy, K.M., Carlson, E.P., T,Smith, P., Smith, T.S., Zheleva, T.S., Zorman, C.A., Mehregany, M., and Davis, R.F., MRS Internet J. Nitride Semicond. Res 4S1, G4.9 (1999).10.1557/S1092578300002921Google Scholar
9. Gehrke, T., Linthicum, K. J., Thomson, D.B., Rajagopal, P., Batchelor, A. D. and Davis, R. F., MRS Internet J. Nitride Semicond. Res 4S1, G3.2 (1999).10.1557/S1092578300002337Google Scholar
10. Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Hartlieb, P., Zheleva, T. S. and Davis, R. F., MRS Internet 11 Nitride Semicond. Res 4S1, G3.37 (1999). “Zheleva, T. S., Thomson, D.B., Smith, S., Rajagopal, P., Linthicum, K. J., Gehrke, T., and Davis, R. F., MRS Internet J. Nitride Semicond. Res 4S1, G3.38 (1999).Google Scholar
12. archland, H M, Zang, N., Zhao, L., Golan, Y., Rosner, S.J., Girolami, G., Fini, P.T., Ibbetson, J.P., Keller, S., Denbaars, S., Speck, J., and Mishra, U.K., MRS Internet J. Nitride Semicond. Res 4, 2 (1999).Google Scholar
13. Kung, P., Walker, D., Hamilton, M., Diaz, J., and Razeghi, M., Appl. Phys. Lett., 74, 570(1998).10.1063/1.123148Google Scholar
14. Weeks, T., Bremser, M., Ailey, K., Carlson, E., Perry, W., and Davis, R., Appl. Phys. Lett., 67,401 (1995).10.1063/1.114642Google Scholar
15. Zorman, C., Fleischman, A., Dewa, A., Mehregany, M., Jacob, C., Nishino, S., and Pirouz, P., J. Appl. Phys., 78, 5136(1995).10.1063/1.359745Google Scholar