Hostname: page-component-7bb8b95d7b-w7rtg Total loading time: 0 Render date: 2024-09-13T04:14:52.840Z Has data issue: false hasContentIssue false
  • English
  • Français

Perfect selective Si epitaxial growth realized by synchrotron radiation irradiation during disilane molecular beam epitaxy

Published online by Cambridge University Press:  22 February 2011

Yuichi Utsumi ,
Housei Akazawa  and
Masao Nagase
Yuichi Utsumi
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa pref., 243-01, JAPAN
Housei Akazawa
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa pref., 243-01, JAPAN
Masao Nagase
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa pref., 243-01, JAPAN
Get access

Abstract

Perfect selectivity in Si epitaxial growth on a Si/SiO2 substrate has been achieved by irradiating SR during molecular beam epitaxy (MBE) using disilane. This differs from conventional selective growth by MBE using disilane in that no Si nucleation occurs on SiO2 irrespective of growth time. Temperature above 700°C is necessary for SR -induced selective growth. This perfect selectivity might result from the elimination of adsorbed Si atoms induced by photo-stimulated evaporation of SiO2 which results in the perfect suppression of Si nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 525
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

[1] Hirayama, H., Tatsumi, T. and Aizaki, N., Appl. Phys. Lett. 5 224 (1988).Google Scholar
[2] Hirose, F., Suemitsu, M., and Miyamoto, N, Jpn. J. Appl. Phys. L2003 (1989).Google Scholar
[3] Aketagawa, K., Tatsumi, T. and Sakai, J., Appl. Phys. Lett. 5 173 (1991).Google Scholar
[4] Kyuragi, H. and Urisu, T., J. Appl. Phys. 61 203 (1986).Google Scholar
[5] J.Takahashi, Utsumi, Y., Akazawa, H., Kawashima, I., and Urisu, T., Appl. Phys. Lett. 58 2776 (1991).Google Scholar
[6] Utsumi, Y., Takahashi, J., Akazawa, H., and Urisu, T., Jpn. J. Appl. Phys. 30 319 (1991).Google Scholar
[7] Akazawa, H., Takahashi, J., Utsumi, Y., Kawashiam, I., and Urisu, T., J. Vac. Sci, Techgnol. A9 2653 (1991).CrossRefGoogle Scholar
[8] Utsumi, Y., Akazawa, H., Nagase, M., Urisu, T. and Kawashima, I., Appl. Phys. Lett. 6 164 (1993).Google Scholar
[9] Akazawa, H., Nagase, M., and Utsumi, Y. to be published in the Proceedings of 7th International Conference on Radiation Effects in InsulatorsGoogle Scholar