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Phase Formation Between Codeposited Co-Ta Thin Film and Single Crystal Silicon Substrate

Published online by Cambridge University Press:  15 February 2011

G. Riskin ,
J. Pelleg  and
M. Talianker
G. Riskin
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, P.O.B. 653, Israel
J. Pelleg
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, P.O.B. 653, Israel
M. Talianker
Affiliation:
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, P.O.B. 653, Israel
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Abstract

A combination of near-noble and refractory metal silicides was considered for shallow contacts to silicon in VLSI circuits [1]. The objective of the present work is to investigate formation of phases between codeposited Co-Ta film, of 150 nm thickness, and n-type silicon substrates of (100) or (111) orientation. Characterization of the specimens annealed in the temperature range of 600–1100°C was done by X-ray diffraction (XRD) and transmission electron microscopy (TEM). It was found that in addition to the silicide phases of Co and Ta, the intermetallic compound Co2 Ta was also formed. Co2 Ta appears only in the lower temperature range of about 600–800°C. At temperatures of 900–1100°C only the silicon rich phases were present. These are the low resistivity phases useful for devices. No ternary phases have been observed. Silicide formation occurs at a faster rate on (111) oriented silicon substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 179
Copyright
Copyright © Materials Research Society 1996

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