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Phase separation of Si1-xGex alloys

Published online by Cambridge University Press:  26 February 2011

Eunja Kim
Affiliation:
Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, R. O. Korea
Young Hee Lee
Affiliation:
Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, R. O. Korea
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Abstract

We generate liquid and amorphous Si1_xGex alloys for various Ge compositions using ab initio molecular dynamics approach. The electronic bonding characters and structural properties are discussed in terms of radial distribution function, bond angle distribution, and order parameters. Although the order parameters suggest approximately random alloy for all compositions, the snapshots reveal clearly phase separation. We will discuss how the phase can be separated in SiGe alloy system.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

[1] Monroe, D., Xie, Y. H., Fitzgerald, E. A., and Silverman, P. J., Phys. Rev. B46, 7935(1992).Google Scholar
[2] Kim, E. and Lee, Y. H., Phys. Rev. B49, 1743(1994).Google Scholar
[3] Arnold, A., Mauser, N., and Hafner, J., J. Phys:Condens. Matt. 1,965(1989). Phys. Rev. B46, 7935(1992).Google Scholar
[4] Stillinger, F. H. and Weber, T. A., Phys. Rev. B31, 5262 (1985).Google Scholar
[5] Stich, I., Car, R. and Parrinello, M., Phys. Rev. B44, 4262(1991).Google Scholar
[6] Ourmazd, A. and Bean, J. C., Phys. Rev. Lett. 55, 765(1985).Google Scholar
[7] Martins, J. L. and Zunger, A., Phys. Rev. Lett. 56, 1400(1986).Google Scholar
[8] Schaefer, A., Broughton, J. Q., Bean, J. C., and Farrel, H. H., Phys. Rev. B33, 2999(1986); J. Q. Broughton, J. A. Schaefer, J. C. Bean, and J. Tersoff, Phys. Rev. Lett. 63, 1164(1989).Google Scholar
[9] Kerlires, P. C. and Tersoff, J., Phys. Rev. Lett. 63, 1164 (1989).Google Scholar
[10] Car, R. and Parrinello, M., Phys. Rev. Lett. 55, 2471(1985); in simple Molecular systems at Very High Density, vol. 186 of NATO Advanced Study Institute, series B; Physics, edited by A. Polian, P. Loubeyre and N. Boccara(Plenum, New York, 1989).Google Scholar
[11] Kleinman, L. and Bylander, D. M., Phys. Rev. Lett. 48, 1425(1982).Google Scholar
[12] Bachelet, G. B., Hamann, D. R., and Schlüiter, M., Phys. Rev. B26, 4199 (1982)Google Scholar
[13] Kim, E., and Lee, Y. H., and Parrinello, M., J. Kor. Phys. Soc. 28, sl72, (1995)Google Scholar
[14] Glasov, V. M., Chizhevskaya, S. N., Glagoleva, N. N., ”Liquid Semiconductors”, (Plenum, New York, 1969).Google Scholar
[15] Hoffmann, F., Schulze, A., Phys. Z. 38, 901(1937); E. S. Greiner, J. Metals 4, 1044(1952).Google Scholar