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Phosphorous Doping of Microcrystalline CVD Diamond Using Modified Conditions

Published online by Cambridge University Press:  01 February 2011

Ken Haenen ,
Andrada Lazea ,
Vincent Mortet ,
Jan D'Haen ,
Peter Geithner  and
Jürgen Ristein
Ken Haenen
Affiliation:
ken.haenen@uhasselt.be, Hasselt University, Institute for Materials Research (IMO), Wetenschapspark 1, Diepenbeek, B-3590, Belgium, +32-(0)11-268875, +32-(0)11-268899
Andrada Lazea
Affiliation:
andrada.lazea@uhasselt.be, IMEC vzw, Division IMOMEC, Diepenbeek, Belgium
Vincent Mortet
Affiliation:
vincent.mortet@uhasselt.be, Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium
Jan D'Haen
Affiliation:
jan.dhaen@uhasselt.be, Hasselt University, Institute for Materials Research (IMO), Diepenbeek, Belgium
Peter Geithner
Affiliation:
peter.geithner@physik.uni-erlangen.de, Friedrich-Alexander Universität Erlangen-Nürnberg, Technische Physik, Erlangen, Germany
Jürgen Ristein
Affiliation:
juergen.ristein@physik.uni-erlangen.de, Friedrich-Alexander Universität Erlangen-Nürnberg, Technische Physik, Erlangen, Germany
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Abstract

Phosphorous-doping of predominantly (110) oriented polycrystalline CVD diamond films is presented. Incorporation of phosphorous into the diamond grains was accomplished by using novel microwave plasma enhanced chemical vapor deposition (MW PE CVD) growth conditions. The substitutional nature of the phosphorous atom was confirmed by applying the quasi-steady-state photocurrent technique (PC) and cathodoluminescence (CL) measurements at low temperature. Topographical information and the relation between substrate and P-doped film grain orientation was obtained with scanning electron microscopy (SEM) and electron back-scattered diffraction (EBSD). The optimized growth parameters for P-doped layers on (110) oriented polycrystalline diamond differ substantially from the standard conditions reported in literature for P-doping of single crystalline (111) and (100) oriented diamond surfaces.

Keywords

diamondchemical vapor deposition (CVD) (deposition)dopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1039: Symposium P – Diamond Electronics–Fundamentals to Applications II , 2007 , 1039-P17-01
Copyright
Copyright © Materials Research Society 2008

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