Hostname: page-component-77c89778f8-7drxs Total loading time: 0 Render date: 2024-07-23T10:24:04.575Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoconductivity Decay in Amorphous Semiconductors

Published online by Cambridge University Press:  26 February 2011

William Pickin ,
Doroteo Mendoza  and
Juan Carlos Alonso
William Pickin
Affiliation:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, 04510 México, D.F., Mexico.
Doroteo Mendoza
Affiliation:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, 04510 México, D.F., Mexico.
Juan Carlos Alonso
Affiliation:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, 04510 México, D.F., Mexico.
Get access

Abstract

Based on modifications of the standard multiple trapping approach we present a theory of photoconductivity decay from the steady state in which explicit account is taken of the minority carrier behaviour. We use this to develop a physical understanding of the decay process. We obtain the intensity dependence of the decay time and compare it with experimental results for hydrogenated amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 125
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wronski, C.R. and Daniel, R.E., Phys. Rev. B 23, 794 (1981)Google Scholar
2. Rose, A., Concepts in Photoconductivity and Allied Problems, (Wiley, New York, 1963)Google Scholar
3. Pickin, W., Solar Cells 9, 95 (1983)Google Scholar
4. Street, R.A., Solid State Commun. 39, 263 (1981)Google Scholar
5. Street, R.A., Biegelsen, D.K. and Weisfield, R.L., Phys. Rev. B 30, 5861 (1984)Google Scholar
6. Shimakawa, K., Yano, Y. and Katsuma, Y., Phil. Mag. B 54, 285 (1986)Google Scholar
7. Fritzsche, H. and Ibaraki, N., Phil. Mag. B 52, 299 (1985)Google Scholar
8. Kastner, M.A. and Monroe, D., Solar Energy Mater. 8, 41 (1982)Google Scholar
9. Tiedje, T. and Rose, A., Solid State Commun. 37, 49 (1981)Google Scholar
10. Orenstein, J. and Kastner, M., Phys. Rev. Lett. 46, 1421 (1981)Google Scholar
11. Marshall, J.M. and Main, C., Phil. Mag. B 47, 471 (1983)Google Scholar
12. Halpern, V., Phil. Mag. B 51, L49 (1985)Google Scholar
13. Michiel, H. and Andriaenssens, G.J., Phil. Mag. B 51, 27 (1985)Google Scholar
14. Parker, M.A., Conrad, K.A. and Schiff, E.A., Mat. Res. Soc. Symp. Proc. Vol.70, p. 125, 1986 Google Scholar