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Photoelectric Properties of PbTiO3/Si Heterostructures

Published online by Cambridge University Press:  10 February 2011

M. Alexe ,
L. Pintilie ,
I. Pintilie ,
A. Pignolet ,
S. Senz  and
D. Hesse
M. Alexe
Affiliation:
Institute of Physics and Technology of Materials, P.O. Box MG-7, 76900 Bucharest, ROMANIA
L. Pintilie
Affiliation:
Institute of Physics and Technology of Materials, P.O. Box MG-7, 76900 Bucharest, ROMANIA
I. Pintilie
Affiliation:
Institute of Physics and Technology of Materials, P.O. Box MG-7, 76900 Bucharest, ROMANIA
A. Pignolet
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle/Saale, GERMANY
S. Senz
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle/Saale, GERMANY
D. Hesse
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle/Saale, GERMANY
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Abstract

Photoelectric properties of PbTiO3/Si heterostructures were investigated over a broad range of wavelengths. The spectral distribution of the a.c. open-circuit voltage was measured for wavelengths ranging from 0.35 μm to 4 μm. Two local peaks are observed at 0.38 μm and 0.9 μm which can be attributed to band-to-band excitations in PbTiO3 and Si respectively. The shape of the a.c. signal depends both on the light intensity and on the wavelength. When the heterojunction is reverse-biased, a d.c. photocurrent was observed which has a similar spectral distribution as the a.c. open-circuit voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 425
Copyright
Copyright © Materials Research Society 1996

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