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Photoemission Investigation on The Effect of H2S Plasma Exposure of InP

Published online by Cambridge University Press:  21 February 2011

Art J. Nelson ,
S. P. Frigo  and
R.R. Rosenberg
Art J. Nelson
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
S. P. Frigo
Affiliation:
Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, WI 53589
R.R. Rosenberg
Affiliation:
Argonne National Laboratory/Advanced Photon Source, Argonne, IL 60439
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Abstract

Synchrotron radiation soft x-ray photoemission spectroscopy was used to characterize the surface chemistry and the electronic structure of InP(100) before and after exposure to an H2S plasma. The low power plasma was generated with an electron cyclotron resonance (ECR) plasma source, using H2S, with the plasma exposure being performed at two temperatures. In-situ photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence band electronic structure and in the In4d, P2p and S2p core lines. The results revealed changes in surface chemistry and electronic properties and indicate that the H2S plasma exposure type converts the ptype InP(100) surface to an n-type surface. The magnitude of the band bending is dependent on the substrate temperature, resulting in a homojunction interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 181
Copyright
Copyright © Materials Research Society 1993

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