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Photoluminescence in B-doped μc-Si:H

Published online by Cambridge University Press:  28 February 2011

S. Q. Gu ,
J. M. Viner ,
P. C. Taylor ,
M. J. Williams ,
W. A. Turner  and
G. Lucovsky
S. Q. Gu
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
J. M. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
M. J. Williams
Affiliation:
Department of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
W. A. Turner
Affiliation:
Department of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Department of Physics and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

Photoluminescence (PL) has been investigated in hydrogenated microcrystalline silicon (μc-Si:H) samples as a function of boron doping for films prepared by remote plasma enhanced chemical vapor deposition. When the dark conductivity a is below about 10-5 S/cm, the PL spectra exhibit a shape which is close to that of the so-called band tail PL in undoped hydrogenated amorphous silicon (a-Si:H) at 77 K. When a increases, the PL intensity decreases at 77 K. For samples with a on the order of 10-3 S/cm, the PL spectra show only a narrow, low energy PL band which peaks around 0.8–0.9 eV. In these samples, the PL at higher energy is essentially not observable. This trend is similar to that which occurs in doped a-Si:H. However, for higher doping levels (σ ∼ 1 S/cm) the PL in μc-Si:H, although very weak, exhibits a broad band which contains intensity at higher energies. The absorption spectra in these samples, as measured by photothermal deflection spectroscopy (PDS), show the same relationships with the corresponding PL spectra as do the PDS spectra in doped a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 579
Copyright
Copyright © Materials Research Society 1993

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References

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