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Photoluminescence of Erbium in Amorphous Silicon: Structural Relaxation and Optical Doping
Published online by Cambridge University Press: 28 February 2011
Abstract
Photoluminescence of erbium in ion-implanted amorphous Si has been observed after annealing at 400°C. In addition, a broad band of luminescence attributed to intrinsic defects in amorphous Si is present. The background level steadily increases with increasing anneal temperature. The fluorescence lifetimes of either the Er or the background in all samples are ≤150μsec.
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- Copyright © Materials Research Society 1992
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