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Photoluminescence Study of Radiative Recombination in Porous Silicon

Published online by Cambridge University Press:  25 February 2011

Chun Wang ,
Franco Gaspari  and
Stefan Zukotynski
Chun Wang
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto Toronto, Ontario, M5S I A4, Canada
Franco Gaspari
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto Toronto, Ontario, M5S I A4, Canada
Stefan Zukotynski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto Toronto, Ontario, M5S I A4, Canada
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Abstract

Photoluminescence has been studied in porous silicon. Two types of radiative recombination centers have been identified. One gives rise to luminescence at about 820 nm and is believed to be related to Si-H bonds. The second gives rise to luminescence at about 770 nm and is likely associated with S-O bonds. Above about 20K radiative recombination is assisted by excited states of the recombination centre located about 10 meV above the ground state. The Si-H recombination centre is a single electron center whereas the Si-O center appears to be a multi-electron center.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 349
Copyright
Copyright © Materials Research Society 1993

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