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Photoreactions in Polyalkylsilynes Induced by ArF-Laser Irradiation

Published online by Cambridge University Press:  25 February 2011

R. R. Kunz ,
P. A. Bianconi ,
M. W. Horn ,
D. A. Smith  and
C. A. Freed
R. R. Kunz
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–9108
P. A. Bianconi
Affiliation:
Department of Chemistry, The Pennsylvania State University University Park, Pennsylvania 16802
M. W. Horn
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173–9108
D. A. Smith
Affiliation:
Department of Chemistry, The Pennsylvania State University University Park, Pennsylvania 16802
C. A. Freed
Affiliation:
Department of Chemistry, The Pennsylvania State University University Park, Pennsylvania 16802
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Abstract

Photoreactions in polyalkylsilyne thin films induced by ArFlaser (193 nm) irradiation have been examined. Photoexcitation of the σ-conjugated Si-network at 193 nm (6.42 eV) results in Si-Si bond scission and alkyl-group desorption when irradiated in a vacuum. In addition to these processes, efficient (up to 7% quantum efficiency) insertion of oxygen into the Si backbone occurs when the irradiation is performed in air, resulting in the formation of a siloxane. Both infrared and X-ray photoelectron spectroscopies indicate a higher oxygen coordination about the Si atoms in the oxidized product than observed for linear polysilanes. This higher oxygen coordination indicates a siloxane network. The polysilynes have been demonstrated as deep UV photoresists and may have additional applications as precursors for thin film or binary optical components.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 501
Copyright
Copyright © Materials Research Society 1991

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References

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