Hostname: page-component-7bb8b95d7b-s9k8s Total loading time: 0 Render date: 2024-10-04T04:21:55.751Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoreflectance Characterization and Control of Defects in Gan by Etching with an Inductively Coupled Plasma

Published online by Cambridge University Press:  11 February 2011

O. J. Glembocki ,
D. K. Gaskill ,
S. M. Prokes  and
S. W. Pearton
O. J. Glembocki
Affiliation:
Naval Research Laboratory, Code 6862, Washington, D.C., 20375
D. K. Gaskill
Affiliation:
Naval Research Laboratory, Code 6862, Washington, D.C., 20375
S. M. Prokes
Affiliation:
Naval Research Laboratory, Code 6862, Washington, D.C., 20375
S. W. Pearton
Affiliation:
Department of Material Science and Engineering, University of Florida, Gainsville, FL 32611
Get access

Abstract

Photoreflectance (PR) is used to detect and characterize the electronic effects etch-induced defects in GaN that is exposed to an Ar or Ar/Cl inductively coupled plasma (ICP). Because of the sensitivity of PR we can follow the formation of etch-induced defects as a function of ion energies and densities. We show that at low RF powers, below 100W, the surface improves in electronic quality, but as the power is increased beyond 200W, etch-induced defects, are formed. The use of an Ar/Cl mixture plays a critical role in control of etch-induced defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.56
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pearton, S.J., Ren, F., Zhang, A.P. and Lee, K.P., Mat. Sci. Eng. Rep, vol R30 pp55–212(2000).Google Scholar
2. Glembocki, O. J., Tuchman, J. A., Dagata, J. A., Ko, K. K., Pang, S. W. and Stutz, C. E., Appl. Phys. Lett., 73, 114(1998).Google Scholar
3. Bermudez, V.M., Appl. Surf. Sci. 119, 147 (1997).Google Scholar
4. Aspnes, D.E., Surf. Sci. 37, 418(1973).Google Scholar
5. Woodall, J.M., Proc. MRS, 324, 141(1994) and references therein.Google Scholar
6. Yin, X., Chen, H.-M, Pollak, F.H., Chan, Y., Montano, P.A., Kirchner, P.D., Petitt, G. and Woodall, J.M., J. Vac. Sci Technol., A10, 131(1992).Google Scholar
7. Leonhardt, D., Eddy, C.R. Jr, Shamamian, V.A., Holm, R.T., Glembocki, O.J., Butler, J.E., J. Vac. Sci Technol., A16, 1547(1998).Google Scholar