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Physical Properties of Silicon Doped Hetero-Epitaxial MOCVD Grown GaN: Influence of Doping Level and Stress

Published online by Cambridge University Press:  03 September 2012

P.R. Hageman ,
V. Kirilyuk ,
A.R.A. Zauner ,
G.J. Bauhuis  and
P.K. Larsen
P.R. Hageman
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525 ED Nijmegen, The Netherlands
V. Kirilyuk
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525 ED Nijmegen, The Netherlands
A.R.A. Zauner
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525 ED Nijmegen, The Netherlands
G.J. Bauhuis
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525 ED Nijmegen, The Netherlands
P.K. Larsen
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525 ED Nijmegen, The Netherlands
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Abstract

Silicon doped layers GaN were grown with MOCVD on sapphire substrates using silane as silicon precursor. The influence of the silicon doping concentration on the physical and optical properties is investigated. A linear relationship is found between the silane-input molfraction and the free carrier concentration in the GaN layers. The morphology of the samples is drastically changed at high silicon concentrations. Photoluminescence was used to probe bandgap variations as function of the silicon concentration. Increasing of the doping concentration led to a continuous shift of the exciton related PL to lower energies, while the intensity of the UV emission was found to increase up to a carrier concentration of n=2.5×1018 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W5.9
Copyright
Copyright © Materials Research Society 1999

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