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The Physics of Metal Base Transistors

Published online by Cambridge University Press:  28 February 2011

E. Rosencher ,
F. Arnaud D'Avitaya ,
P.A. Badoz ,
C. d'Anterroches ,
G. Glastre ,
G. Vincent  and
J.C. Pfister
E. Rosencher
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du VieuxChêne - 38243MEYLAN CEDEX -FRANCE
F. Arnaud D'Avitaya
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du VieuxChêne - 38243MEYLAN CEDEX -FRANCE
P.A. Badoz
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du VieuxChêne - 38243MEYLAN CEDEX -FRANCE
C. d'Anterroches
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du VieuxChêne - 38243MEYLAN CEDEX -FRANCE
G. Glastre
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du VieuxChêne - 38243MEYLAN CEDEX -FRANCE
G. Vincent
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du VieuxChêne - 38243MEYLAN CEDEX -FRANCE
J.C. Pfister
Affiliation:
Centre National d'Etudes des Té1écommunications - BP: 98 - Chemin du VieuxChêne - 38243MEYLAN CEDEX -FRANCE
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Abstract

Epitaxial Si/CoSi2/Si structures can be grown under ultra-high vacuum conditions. The metallic CoSi2 films can be extremely thin typically between 1 nm and 20 nm. The electrical properties of these heterostructures are presented, mainly the transport of electrons in the metallic films parallel to the interfaces and the transfer of electrons through the metal ilm. The influence of pinholes in the CoSi2 layers will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 415
Copyright
Copyright © Materials Research Society 1987

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References

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