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Plasma Doping and Plasma-Less Doping of Semiconductor
Published online by Cambridge University Press: 03 September 2012
Abstract
New doping processes which can alternate the ion implantation to achieve the ultra shallow junction are reviewed. Mainly two ways have been proposed. One uses plasma and the other uses vapor phase reaction. 0.17μm Surface Channel (SC) - PMOSFET's have been successfully fabricated by especially plasma doping method.
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- Research Article
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- Copyright © Materials Research Society 1997
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