Hostname: page-component-5c6d5d7d68-tdptf Total loading time: 0 Render date: 2024-08-21T19:19:34.816Z Has data issue: false hasContentIssue false
  • English
  • Français

Plasma-Induced Effects on The Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001)

Published online by Cambridge University Press:  17 March 2011

D.I. Florescu ,
Fred H. Pollak ,
William B. Lanfor ,
Farid Khan ,
I. Adesida  and
R.J. Molnar
D.I. Florescu
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
Fred H. Pollak
Affiliation:
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, Brooklyn, NY 11210
William B. Lanfor
Affiliation:
University of Illinois at Urbana-Champaign, Urbana, IL 61801
Farid Khan
Affiliation:
University of Illinois at Urbana-Champaign, Urbana, IL 61801
I. Adesida
Affiliation:
University of Illinois at Urbana-Champaign, Urbana, IL 61801
Get access

Abstract

We have measured high spatial/depth resolution (2-3 [.proportional]m) thermal conductivity (κk) at 300K before and after plasma-induced effects on a series of n-GaN/sapphire (0001) samples fabricated by hydride vapor phase epitaxy (HVPE) using a ThermoMicroscope'as scanning thermal microscope (SThM). The sample thicknesses were 50 ± 5 [.proportional]m and the carrier concentrations ~ 8 × 1016 cm-3, as determined by Hall effect measurements. The thermal conductivity before treatment was found to be in the 1.70 – 1.75 W/cm-K range, similar to that previously reported for HVPE material with this carrier concentration and thickness [D. I. Florescu et al., J. Appl. Phys. 88, 3295 (2000)]. The samples were processed under constant Ar gas flow and pressure fora fixed period of time (5 min). The only variable processing parameter was the DC bias voltage (125 – 500 V). After the initial 125 V procedure κ exhibited a decrease linear in the DC voltage in the investigated range. At 125 V the thermal conductivity was only slightly less (κ ~ 1.65 W/cm-K) than the untreated case. κ had dropped to ~ 0.3 W/cm-K for the 500 V situation. The implications of these results for device applications in the area of high power opto-electronics and high power electronics will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.57
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kucheyev, S.O., Williams, J.S., Jagadish, C., Li, G., and Pearton, S.J., Appl. Phys.Lett. 76, 3899 ((2000).Google Scholar
2 Tan, H.H., Williams, J.S., Zou, J., Cockayne, D.J., Pearton, S.J., and Stall, R.A., Appl. Phys. Lett. 69, 2364 ((1996).Google Scholar
3 Liu, C., Mensching, B., Zeitler, M., Volz, K., and Raushcenback, B.. Phys. Rev. B 57, 2530 ((1998).Google Scholar
4 Wampler, W.R. and Myers, S.M., MRS Internet J. Nitride Semiconductor Res. 4S1, G3.73 (1999).Google Scholar
5See, for example, Group III Nitride Semiconductor Compounds, edited by Gil, B. (Claredon, Oxford, 1998).Google Scholar
6 Sichel, E.K. and Pankove, J.I., J. Phys. Chem. Solids 38, 330 ((1977).Google Scholar
7 Florescu, D.I., Asnin, V.M., Pollak, F.H., Jones, A.M., Ramer, J.C., Schurman, M.J., and Ferguson, I., Appl. Phys. Lett. 77, 1464 ((2000).Google Scholar
8 Florescu, D.I., Asnin, V.M., Pollak, F.H., and Molnar, R.J., Mater. Res. Soc. Symp.Proc. 595, 3.89.1 (2000).Google Scholar
9 Florescu, D.I., Asnin, V.M., Pollak, F.H., Molnar, R.J., and Wood, C.E.C., J. Appl.Phys. 88, 3295 ((2000).Google Scholar
10 Asnin, V.M., Pollak, F.H., Ramer, J., Schurman, M., and Ferguson, I., Appl. Phys.Lett. 75, 1240 ((1999).Google Scholar
11 Luo, C.Y., Marchand, H., Clarke, D.R., and DenBaars, S.P., Appl. Phys. Lett. 75, 4151 ((1999).Google Scholar
12 Slack, G.A., J. Phys. Chem. Solids 34, 321 ((1973).Google Scholar
13 Witek, A., Diamond Relat. Mater. 7, 962 ((1998).Google Scholar
14 Berman, R., Diamond Relat. Mater. 8, 2016 ((1999)Google Scholar
15See, for example, Thermal Conduction in Semiconductors , edited by Bandhari, C.M. and Rowe, D.M. (Wiley, New York, 1988).Google Scholar
16ThermoMicroscopes, 1171 Borregas Avenue, Sunnyvale, CA 94089.Google Scholar
17 Molnar, R.J., W. Götz, Romano, L.T., and Johnson, N.M., J. Crystal Growth 178, 147 ((1997).Google Scholar
18 Akasaki, I., and Amano, H. in Properties of Group III Nitrides , ed. by Edgar, J.H. (INSPEC, London, 1994) p. 30. Google Scholar
19 Berman, R., Phys. Rev.B 45, 5726 ((1992).Google Scholar
20 Breitschädel, O., Hsieh, J.T., Kuhn, B., Scholz, F., and Schweiser, H., Appl. Phys. Lett. 76, 1899 ((2000).Google Scholar