Hostname: page-component-68945f75b7-k8jzq Total loading time: 0 Render date: 2024-09-04T02:25:28.735Z Has data issue: false hasContentIssue false
  • English
  • Français

Point Defect-Based Modeling of Transient Diffusion of Boron Implanted in Silicon Along Random and Channeling Directions

Published online by Cambridge University Press:  15 February 2011

H. U. Jäger
H. U. Jäger*
Affiliation:
Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden, Germany.
Get access

Abstract

A point defect-based model, which has been developed to describe diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing, is used to simulate the anomalous diffusion of boron implanted into silicon along the random and [100] channeling directions. The model predictions are compared to data measured by Chu et al.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 71
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Solmi, S., Baruffaldi, F., ,and Canteri, R., J. Appl. Phys. 69, 2135 (1991); N. E. B. Cowern, K. T. F. Janssen and H. F. F. Jos, ibid., 68, 6191 (1990).Google Scholar
2 Chu, W.K., Numan, M. Z., Zhang, J. Z., Sandhu, G. S. and Michel, A. E., Nucl. Instr. Meth. B37/38, 365 (1989).Google Scholar
3 Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., and J. M. Poate, Appl. Phys. Lett. 65, 2305 (1994); N. E. B. Cowern, G. F. A. van de Walle, P. C. Zalm and D. W. E. Vandenhoudt, ibid., 65, 2981 (1994); P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, J. M. Poate and H. S. Luftman, ibid., 66, 568 (1995).Google Scholar
4 Jäger, H. U., Nucl. Instr. Meth. B80/81, 679 (1993).Google Scholar
5 Jäger, H. U., “Point defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon”, J. Appl. Phys., in pressGoogle Scholar
6 Huang, R. Y. S. and Dutton, R. W. in Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology, edited by Srinivasan, G. R., Taniguchi, K. and Murthy, C. S. (The Electrochemical Society, Pennington, NJ, 1993) pp. 46–53.Google Scholar
7 Computer code TESIM (Fraunhofer-Institute of Microelectronic Circuits and Systems, IMS2, Grenzstr. 28, D-01109 Dresden, Germany, 1994).Google Scholar