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Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content

Published online by Cambridge University Press:  15 February 2011

V. Privitera ,
S. Coffa ,
K. Kyllesbech Larsen ,
S. Libertino ,
G. Mannino  and
F. Priolo
V. Privitera
Affiliation:
CNR-IMETEM, Stradale Primosole 50,195121 Catania, (Italy)
S. Coffa
Affiliation:
CNR-IMETEM, Stradale Primosole 50,195121 Catania, (Italy)
K. Kyllesbech Larsen
Affiliation:
Philips Research Laboratory, Eindhoven, The Netherlands
S. Libertino
Affiliation:
INFM and Dipartimento di Fisica, Università di Catania, Corso Italia 57,195129 Catania (Italy)
G. Mannino
Affiliation:
INFM and Dipartimento di Fisica, Università di Catania, Corso Italia 57,195129 Catania (Italy)
F. Priolo
Affiliation:
INFM and Dipartimento di Fisica, Università di Catania, Corso Italia 57,195129 Catania (Italy)
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Abstract

Our recent work on the room temperature migration and trapping phenomena of self-interstitials and vacancies in crystalline Si is reviewed. Spreading resistance profiling and deep level transient spectroscopy measurements were used to monitor the interaction of ion beam generated defects with dopant atoms, intrinsic impurities (i.e. O and C), pre-existing defect marker layers and sample surface. We have found that both interstitials and vacancies undergo fast long range migration which is interrupted by trapping at impurities and by recombination at defects or at the surface. Effective defect migration lengths as large as 5 μm at room temperature have been observed in highly pure, defect free epitaxial Si samples. A lower limit of 1×10−10 cm2/sec for the room temperature diffusivity of self-interstitials has been determined. Furthermore, by monitoring the migration and interaction processes of point defects injected through a mask, we have established that surface acts as an effective sink for the migrating Si self interstitials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 163
Copyright
Copyright © Materials Research Society 1997

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References

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