Hostname: page-component-84b7d79bbc-fnpn6 Total loading time: 0 Render date: 2024-07-31T21:20:15.774Z Has data issue: false hasContentIssue false
  • English
  • Français

Poly-Silicon Deposition by Evaporation for TFTs

Published online by Cambridge University Press:  22 February 2011

W. Schmolla ,
J. Diefenbach ,
G. Blang  and
W. Senske
W. Schmolla
Affiliation:
AEG Research Institute, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
J. Diefenbach
Affiliation:
AEG Research Institute, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
G. Blang
Affiliation:
AEG Research Institute, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
W. Senske
Affiliation:
AEG Research Institute, Goldsteinstrasse 235, D-6000 Frankfurt 71, FRG
Get access

Abstract

Poly-Si films were e-gun evaporated onto glass substrates. The Hall-mobility for holes was found to be about 2 cm2/Vs in undoped poly-Si films deposited at 400°C and 9 cm2/Vs at 500°C. TFTs were fabricated on the base of poly-Si evaporation technique on borosilicate glass at a highest process temperature of 550°C without ion implantation. The electrical TFT characteristics yield electron field-effect mobilities higher than 10 cm2/Vs as well as threshold voltages less than IV and an on/off current ratio in excess of 104.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 329
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Migliorato, progress in active matrix addressing of LCDs, proceedings of eurodisplay ‘87, Institute of Physics, London, U.K.Google Scholar
2. Morozumi, , Oguchi, , Misawa, , Araki, , Ahshima, , SID ‘84, DigestGoogle Scholar
3. Oana, , Kotake, , Mokai, , Ide, , I.I. Appl. Phys. vol.22, Supplement 22–1, 1983 Google Scholar
4. Matsui, , Shiraki, , Maruyama, , J. Appl. Phys. 55(6), 1984 CrossRefGoogle Scholar
5. Fossum, , Ortiz-Conde, , Shichijo, , Banerjee, , IEEE Transactions on electron devices, vol. ed-32, No. 9, Sept., 1985 Google Scholar
6. Brotherton, , Young, , Gill, , ESSDERC '87, 17th European SSDR Conference, Bologna, Italy, Sept.14–17, 1987 Google Scholar