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Polysilicon Super Thin Film Transistor Technology

Published online by Cambridge University Press:  22 February 2011

Takashi Noguchi ,
Hisao Hayashi  and
Takefumi Ohshima
Takashi Noguchi
Affiliation:
Research & Development Div., Semiconductor Group SONY Corp., Atsugi, Kanagawa, Japan
Hisao Hayashi
Affiliation:
Research & Development Div., Semiconductor Group SONY Corp., Atsugi, Kanagawa, Japan
Takefumi Ohshima
Affiliation:
Research & Development Div., Semiconductor Group SONY Corp., Atsugi, Kanagawa, Japan
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Abstract

Advanced super thin(of less than 800Å) polysilicon films with the grain size of more than lum were developed by applying the Si+implanted amorphization and subsequent annealing. With this film, TFT with superior characteristics could have been fabricated on quartz or SiO2/c-Si substrate. At the process of 600°C, field effect electron mobility as large as 60cm 2/V.s. was obtained. Furthermore, using the high temperature process of 1000°C, electron and hole mobility increased to the value of 120 and 80cm2/V.s, respectively. The values of field effect electron mobility were almost constant over a wide temperature range. The CMOS scanner was fabricated and operated faster than 5MHz. These advanced polysilicon TFT's have a great impact on large size LSI.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 293
Copyright
Copyright © Materials Research Society 1988

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References

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