Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-07-07T12:16:35.323Z Has data issue: false hasContentIssue false
  • English
  • Français

A Possibility of ALE Growth of InN by using InCl3

Published online by Cambridge University Press:  16 February 2011

Kazuhito Higuchi ,
Akio Unno  and
Tadashi Shiraishi
Kazuhito Higuchi
Affiliation:
Tokai University, Dept. of Communications, 1117 Kitakaname Hiratsuka 259–12, Japan Fax. 81-463-58-1812
Akio Unno
Affiliation:
Tokai University, Dept. of Communications, 1117 Kitakaname Hiratsuka 259–12, Japan Fax. 81-463-58-1812
Tadashi Shiraishi
Affiliation:
Tokai University, Dept. of Communications, 1117 Kitakaname Hiratsuka 259–12, Japan Fax. 81-463-58-1812
Get access

Abstract

A possibility of the Atomic Layer Epitaxy, ALE, for InN was demonstrated by using InC13/N2 and NH3/N2. The InCl3 is a solid at room temperature and can be supplied in the reactor by heating with N2 carrier gas. When the solid InCl3 is heated in an inert gas, InCl, InCl3 and In2Cl3 gases are formed. It was clear that the In2Cl5 which is the largest molecule of the three results in solid structural defects. The ALE growth temperature was from 440°C to 505°C. The fact that the ALE was performed at the temperature range from 440°C to 505°C indicates that In was supplied as InC13, suggesting the possibility of InN ALE by using InCl3 and NH3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 169
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Hovel, H. J. and Cuomo, J. J.; Appl. Phys. Letter, 20, 71 (1972)Google Scholar
2) Foley, C. P. and Tansley, T. L.; Appl. Surf. Science 14, 254 (1984)Google Scholar
3) Puychevrier, N. and Menoret, M.; Thin Solid Films 36, 141 (1976)CrossRefGoogle Scholar
4) Natarajan, B. R., Eltoukhy, A. H., Greene, J. E. and Barr, T. L.; Thin Solid Films 36, 141 (1976), 69, 201 (1980)Google Scholar
5) Tansley, T. L. and Foley, C. P.; Electronics Letters, 20, 1066 (1984)Google Scholar
6) Shiraishi, T. and Matsui, T.; Proc. of 8th Int. Sympo. Plasma Chemi., 4, 2355 (1987)Google Scholar
7) MacChesney, J. B., Bridenbaugh, P. M. and P. B. O'Connor; Mater. Res. Bull., 5,783 (1970)Google Scholar
8) Mori, K., Yoshida, M., Usui, A. and Terao, H.; Appl. Phys. Letters, 52, 27 (1988)Google Scholar
9) Jin, Y., Kobayashi, R., Fujii, K. and Hasegawa, F.; Japan. J. Appl. Physics, 29, 1350 (1990)Google Scholar