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Possibility of Self-Trapped Excitons in Silicon Nanocrystallites

Published online by Cambridge University Press:  15 February 2011

G. Allan ,
C. Delerue  and
M. Lannoo
G. Allan
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electroniquedu Nord, 41 boulevard Vauban, 59046 Lille Cédex, France, gal@isen.fr
C. Delerue
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electroniquedu Nord, 41 boulevard Vauban, 59046 Lille Cédex, France, gal@isen.fr
M. Lannoo
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electroniquedu Nord, 41 boulevard Vauban, 59046 Lille Cédex, France, gal@isen.fr
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Abstract

We present semi-empirical tight-binding and ab-initio local density calculations demonstrating the (meta)stability of self-trapped excitons in silicon nanocrystallites. These are obtained not only for surface dimer bonds passivated for instance by hydrogen atoms or by silicon oxide but also for “normal” nearest-neighbors bonds. Light emission from these trapped excitons is predicted in the infrared or in the visible. We are thus led to the interpretation that part of the luminescence is due to such localized states while optical absorption is characteristic of quantum confinement effects. These conclusions should extend to other semiconductor crystallites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 235
Copyright
Copyright © Materials Research Society 1996

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References

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