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Pre-Annealing of TiN Barriers in Al Metallization of Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
We have studied the influence of a high-temperature pre-anneal on the barrier performance of TiN in Al metallization of Si. The results show that barrier failure is shifted towards a higher temperature by 20°C-40°C when the barrier is pre-annealed at 600°C-800°C. In addition, we studied the failure mechanism and found that the barrier breaks down by compound formation.
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- Copyright © Materials Research Society 1985