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Precipitation of Copper in Transmutation Doped Silicon
Published online by Cambridge University Press: 22 February 2011
Abstract
During the long-time diffusion of transmutation doped silicon a variety of large CuSi precipitates is introduced into the material. The precipitates have been found to be metastable and transform during subsequent heat treatments. One of the most surprising results of such a transformation is the generation of large, extended monolayer precipitates, which are shown to represent the stable configuration of the precipitate system.
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- Copyright © Materials Research Society 1984
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