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Preparation And Characterization Of Carbon Nitride Thin Films By Electron Cyclotron Resonance (Ecr) Sputtering Method

Published online by Cambridge University Press:  10 February 2011

Yoshifumi Aoi ,
Youji Tani ,
Masaaki Hisa  and
Eiji Kamijo
Yoshifumi Aoi
Affiliation:
Department of Materials Chemistry and High-Tech Research Center, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, Japan, aoi@rins.ryukoku.ac.jp
Youji Tani
Affiliation:
Department of Materials Chemistry and High-Tech Research Center, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, Japan, aoi@rins.ryukoku.ac.jp
Masaaki Hisa
Affiliation:
Department of Materials Chemistry and High-Tech Research Center, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, Japan, aoi@rins.ryukoku.ac.jp
Eiji Kamijo
Affiliation:
Department of Materials Chemistry and High-Tech Research Center, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, Japan, aoi@rins.ryukoku.ac.jp
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Abstract

Crystalline carbon nitride films were deposited by electron cyclotron resonance (ECR) plasma sputtering method using a carbon target and a nitrogen gas atmosphere. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and X-ray diffraction (XRD). Nitrogen content of the deposited film was varied with substrate selfbias potential and substrate temperature. Bonding states of nitrogen and carbon in the deposited filns were different according to the substrate temperature, sp3 C-N bonds were observed for the film deposited at 600 °C. Crystallization of carbon nitride thin film was observed hen the deposition was carried out an elevated substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 419
Copyright
Copyright © Materials Research Society 1999

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