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Preparation and Characterization of High Porosity Si02 Xerogels for Low k Dielectrics

Published online by Cambridge University Press:  10 February 2011

M. T. Colomer
M. T. Colomer*
Affiliation:
Water Chemistry Program, University of Wisconsin-Madison, 660 North Park Street, Madison, Wisconsin 53706
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Abstract

Due to its low dielectric constant, high porosity SiO2 is a potential intermetal dielectric (IMD) film for sub-half micron devices. High porosity SiO2 xerogels with a low dielectric constant were prepared by a sol-gel method. Basic and mixtures of SiO2 sols (acid/base) aqueous particulate suspensions were employed using TEOS as a precursor.

Porosity values up to 55% could be obtained for the silica xerogels calcined at 250°C. The porosity values were estimated by means of nitrogen adsorption (BET). The dielectric constant was directly measured using an impedance analyzer and also calculated from the nitrogen adsorption measurements. Both techniques were in good agreement and resulted in a dielectric constant value of 2.32 for xerogels having the highest porosity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 211
Copyright
Copyright © Materials Research Society 1999

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