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Preparation and Electrical Properties of (Zr, Sn)TiO4 Dielectric Thin Films by Laser Ablation

Published online by Cambridge University Press:  15 February 2011

Osamu Nakagawara ,
Hitoshi Tabata ,
Yuji Toyota ,
Masato Kobayashi ,
Yukio Yoshino ,
Yuzo Katayama  and
Tomoji Kawai
Osamu Nakagawara
Affiliation:
Murata Manufacturing Co., Ltd., 2–26–10 Tenjin, Nagaokakyo-shi, Kyoto 617, Japan
Hitoshi Tabata
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka, Ibaraki-shi, Osaka 567, Japan
Yuji Toyota
Affiliation:
Murata Manufacturing Co., Ltd., 2–26–10 Tenjin, Nagaokakyo-shi, Kyoto 617, Japan
Masato Kobayashi
Affiliation:
Murata Manufacturing Co., Ltd., 2–26–10 Tenjin, Nagaokakyo-shi, Kyoto 617, Japan
Yukio Yoshino
Affiliation:
Murata Manufacturing Co., Ltd., 2–26–10 Tenjin, Nagaokakyo-shi, Kyoto 617, Japan
Yuzo Katayama
Affiliation:
Murata Manufacturing Co., Ltd., 2–26–10 Tenjin, Nagaokakyo-shi, Kyoto 617, Japan
Tomoji Kawai
Affiliation:
Institute of Scientific and Industrial Research, Osaka University, 8–1 Mihogaoka, Ibaraki-shi, Osaka 567, Japan
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Abstract

(Zr, Sn)TiO4 is considered as a promising dielectric material for microwave devices owing to the temperature stability of capacitance and excellent microwave properties. Preferential (111)-oriented (ZrSn)TiO4 thin film was obtained by an ArF laser ablation. Properties of the crystallized film were as follows; the temperature coefficient of capacitance TCC was 17.6ppm/°C at 3MHz and the dielectric constant εr, 38 in the microwave range of 1GHz˜10GHz. It has turned out that the crystallization of this material is quite effective for improving dielectrical properties. Surface morphologies were observed by atomic force microscope(AFM). Grains grew on the crystallized film at 1 μm × 1 μm size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 97
Copyright
Copyright © Materials Research Society 1996

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References

1. Sakuma, T., Yamaguchi, S., Matsubara, S., Yamaguchi, H., and Miyasaka, Y., Appl.Phys.Lett., 57, 2431 (1990).Google Scholar
2. Takagi, H., Fujinami, N., Tamura, H., and Wakino, K., Jpn.J.Appl.Phys., 31, 3269 (1992).Google Scholar
3. Sánchez, F., Varela, M., Queralt, X., Aguiar, R., and Morenza, J.L., Appl.Phys.Lett., 61, 2228 (1992).Google Scholar
4. Bhattacharya, P., Komeda, T., Park, K., and Nishioka, Y., Jpn.J.Appl.Phys., 32, 4103 (1993).Google Scholar
5. McHale, A.E. and Roth, R.S., J.Am.Ceram.Soc., 69, 827 (1986).Google Scholar
6. Newnham, R.E., J. Am.Ceram.Soc., 50, 216 (1967).Google Scholar
7. Wakino, K., Minai, K., and Tamura, H., J.Am.Ceram. Soc., 67, 278 (1984).Google Scholar
8. Nakagawara, O., submitted to J. Appl. Phys.Google Scholar
9. Wang, D. and Oki, T., Hyomengijutu (in Japanese), 4 [8], 29 (1990).Google Scholar