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Preparation of Piezoelectric PZT Thin Films by Mocvd for MEMS Applications

Published online by Cambridge University Press:  10 February 2011

Ing-Shin Chen ,
Dong-Joo Kim ,
Jon-Paul Maria ,
Jeffery F. Roeder  and
Angus I. Kingon
Ing-Shin Chen
Affiliation:
ATMI, Danbury, CT 06810, bchen@atmi.com
Dong-Joo Kim
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Jon-Paul Maria
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
Jeffery F. Roeder
Affiliation:
ATMI, Danbury, CT 06810, bchen@atmi.com
Angus I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

Integration of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films promises to provide silicon-based microelectromechanical systems (MEMS) with added functionality. PZT films with compositions near the tetragonal/rhombohedral morphotropic boundary have been deposited on iridium-coated Si substrates by a thermal chemical vapor deposition (CVD) process using flash vaporized metalorganic precursors. Process variables including (A-site)-to-(B-site) ratios in the precursor mix and deposition times have been surveyed. Stoichiometric, perovskite films with nominal Zr/Ti ratios ranging from 40/60 to 60/40 were obtained. Parallel-plate capacitor structures have been fabricated by depositing Pt top electrodes using e-beam evaporation through shadow masks. Ferroelectric hysteresis loops were measured using a standard ferroelectric tester. Remenant polarization values in the range of 20∼30 μC/cm2 were obtained. For films of 0.5 μm or thicker, piezoelectric hysteresis loops were characterized by dual-beam interferometry. Longitudinal piezoelectric coefficients (d33) of 30∼60 pm/V were observed on the films deposited between 550 and 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 541
Copyright
Copyright © Materials Research Society 2000

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