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The µτ Problem: New Results on Micro-Doped a-Si:H Films

Published online by Cambridge University Press:  01 January 1993

Natalie BECK ,
Nicolas WYRSCH ,
Evelyne SAUVAIN  and
Arvind SHAH
Natalie BECK
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland
Nicolas WYRSCH
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland
Evelyne SAUVAIN
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland
Arvind SHAH
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Rue Breguet 2, CH-2000 Neuchâtel, Switzerland
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Abstract

Comparative µτ-product measurements performed on a series of slightly doped (micro- doped) a-Si:H films by steady-state photocarrier grating (SSPG), steady-state photoconductivity (SSPC) and time of flight (TOF) are presented. The observed discrepancy between transient and steady-state majority carriers µτ-products is discussed within the framework of a dangling bond recombination model. Furthermore, results on the variation of µτ with doping and light-soaking are reported and ratio of capture cross-sections of charged to neutral defects are deduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 479
Copyright
Copyright © Materials Research Society 1993

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References

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