Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-22T04:26:14.048Z Has data issue: false hasContentIssue false
  • English
  • Français

Process Integration of A-Si:H Schottky Diode and thin Film Transistor for Low-Energy X-Ray Imaging Applications

Published online by Cambridge University Press:  10 February 2011

B. Park ,
R.V.R. Murthy ,
A. Sazonov ,
A. Nathan  and
S.G. Chamberlain
B. Park
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada. bpark@venus.uwaterloo.ca
R.V.R. Murthy
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
A. Sazonov
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
A. Nathan
Affiliation:
E&CE Department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
S.G. Chamberlain
Affiliation:
DALSA Inc., 605 McMurray Road, Waterloo, Ontario N2V 2E9, Canada
Get access

Abstract

In this paper, we discuss the various design and fabrication issues related to the process integration of a molybdenum/amorphous silicon (Mo/a-Si:H) Schottky diode and a thin film transistor (TFT), for realization of an X-ray pixel intended for large area and low energy imaging applications. Here, the Schottky diode serves as the sensor and the TFT as a switching element for charge readout. Different pixel configurations are fabricated and compared taking into consideration design aspects such as leakage current, process sequence in terms of mask count, fill factor, and mechanical integrity of various layers. Preliminary X-ray response measurements, over the range (40 – 115) kVp, yield a pixel sensitivity of (1–10) million electrons for a readout sampling period of 16·7 ms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 237
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Fuhs, W., in Amorphous and Microcrystalline Semiconductor Devices II: Material and Device Physics, edited by Kanicki, J. (Artech House, Norwood, MA, 1992), pp. 1–54.Google Scholar
2 Weisfield, R.L. Street, R.A., Apte, R., and Moore, A., Proc. SPIE, 3032, 14 (1997).Google Scholar
3 Zhao, W. and Rowlands, J.A., Proc. SPIE, 1651, 38 (1992).Google Scholar
4 Aflatooni, K., Nathan, A., Hornsey, R.I., and Cunningham, I.A., Technical Digest, 9th Int. Conf. on Solid State Sensors and Actuators, 1997, 1299.Google Scholar
5 Aflatooni, K., Nathan, A., Hornsey, R., Cunningham, I.A., and Chamberlain, S.G., Technical Digest, IEDM, 1997, 197.Google Scholar
6 Murthy, R.V.R., Park, B., Pereira, D., Benaissa, K., Nathan, A. and Chamberlain, S.G., Proc. Int. Symp. on Circuits and Syst., 1998, in press.Google Scholar
7 Zhao, W. and Rowlands, J.A., Med. Phys., 22, 1595 (1995).Google Scholar
8 Lee, D.L., Jeromin, L.S. and Cheung, L.K., Proc. SPIE, 2432, (1995).Google Scholar
9 Street, R.A., Wu, X.D., Weisfield, R., Ready, S., Apte, R., Ngyuen, M., Jackson, W.B., and Nylen, P., J. Non-Cryst. Solids, 198–200, 1151 (1996).Google Scholar
10 Park, B., Murthy, R.V.R., Benaissa, K., Aflatooni, K., Nathan, A., Hornsey, R.I. and Chamberlain, S.G., J. Vac. Sci. Technol. A 16 (2), Mar/Apr (1998), in press.Google Scholar
11 Thornton, J.A. in Deposition Technologies for Films and Coatings, edited by Bunshah, R.F., (Noyes Publications, Park Ridge, NJ, 1982), p. 221.Google Scholar
12 Thomnton, J.A. and Hoffmann, R.W., J.Vac.Sci.Technol., 14, 164 (1977).Google Scholar
13 Gupta, M., Rathi, V.K., Thangaraj, R., Agnihotri, O.P., and Chari, K.S., Thin Solid Films, 204, 74(1991).Google Scholar
14 Taylor, J.A., J. Vac. Sci. Technol. A 9, 2464 (1991).Google Scholar