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Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

Published online by Cambridge University Press:  21 March 2011

R. N. Ghosh ,
S. Ezhilvalavan ,
B. Golding ,
S. M. Mukhopadhyay ,
N. Mahadev ,
P. Joshi ,
M. K. Das  and
J. A. Cooper Jr
R. N. Ghosh
Affiliation:
Center for Sensor Materials, Michigan State Univ., E. Lansing, MI 48864
S. Ezhilvalavan
Affiliation:
Center for Sensor Materials, Michigan State Univ., E. Lansing, MI 48864
B. Golding
Affiliation:
Center for Sensor Materials, Michigan State Univ., E. Lansing, MI 48864
S. M. Mukhopadhyay
Affiliation:
Dept. of Mechanical & Materials Engineering, Wright State Univ., Dayton, OH 45435
N. Mahadev
Affiliation:
Dept. of Mechanical & Materials Engineering, Wright State Univ., Dayton, OH 45435
P. Joshi
Affiliation:
Dept. of Mechanical & Materials Engineering, Wright State Univ., Dayton, OH 45435
M. K. Das
Affiliation:
Cree Inc., 4600 Silicon Dr., Durham, NC 27703
J. A. Cooper Jr
Affiliation:
School of Electrical & Computer Engineering, Purdue Univ., W. Lafayette, IN 47907
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Abstract

The implementation of SiC based sensors and electronics for operation in chemically harsh, high temperature environments depends on understanding the SiO2/SiC interface in field effect devices. We have developed a technique to fabricate wedge polished samples (angle ∼ 1×10−4 rad) that provides access to the SiO2/SiC interface via a surface sensitive probe such as xray photoelectron spectroscopy (XPS). Lateral scanning along the wedge is equivalent to depth profiling. Spatially resolved XPS images of the O 1s and Si 2p core levels were obtained of the interfacial region. Samples consist of device-quality thermally grown oxides on 4H-SiC single crystal substrates. The C 1s spectrum suggests the presence of a graphitic layer on the nominally bare SiC surface following thermal oxidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H3.7
Copyright
Copyright © Materials Research Society 2001

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References

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