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Properties of Chlorine-Doped Zinc Selenide Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  21 February 2011

S. Hwang ,
J. Ren ,
K.A. Bowers ,
J.W. Cook Jr.  and
J.F. Schetzina
S. Hwang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
J. Ren
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
K.A. Bowers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
J.W. Cook Jr.
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
J.F. Schetzina
Affiliation:
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
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Abstract

ZnSe:Cl epilayers have been grown on (100) GaAs by MBE using a Zn to Se beam flux ratio of 2:1 and substrate temperatures as low as 225 °C. The ZnSe:Cl epilayers are highly conducting and exhibit bright blue-violet edge luminescence at 300 K. A mobility of 2480 cm2 /V-s at 40 K was measured for an n-type ZnSe:CI film that was Cl-doped to ∼2.3×1017 cm−3 and for which a compensation ratio (NA/ND) of ∼3% was calculated. Carrier concentrations as large as 6.7×1018cm−3 were obtained by increasing the temperature of the MBE oven containing the C1 dopant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 133
Copyright
Copyright © Materials Research Society 1990

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References

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