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Pulsed Laser Crystallization of GexSi1−x Alloy Films on Si(100) Substrates

Published online by Cambridge University Press:  26 February 2011

John R. Abelson ,
Kurt H. Weiner ,
Ki-Bum Kim  and
Thomas W. Sigmon
John R. Abelson
Affiliation:
Electrical Engineering Department and Stanford Electronics Laboratories, Stanford CA. 94305
Kurt H. Weiner
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA. 94550
Ki-Bum Kim
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford CA. 94305
Thomas W. Sigmon
Affiliation:
Electrical Engineering Department and Stanford Electronics Laboratories, Stanford CA. 94305
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Abstract

We demonstrate the fabrication of high quality GexSi1−x heteroepitaxial alloy layers on Si(100) substrates by pulsed laser melting of a-Ge/Si(100) layered structures. First, 50–200Å of germanium are evaporated onto a chemically cleaned silicon wafer. Next, an excimer laser pulse is used to melt the sample surface to a depth of 200–2500Å. Finally, the melt solidifies in 20–100ns producing a heteroepitaxial alloy layer. By varying the thickness of the evaporated Ge film and the laser energy, alloys of 500–1500Å thickness and Ge fraction x=3–20% are obtained. The crystallinity of the layer and interface are found to be excellent as evaluated by Rutherford Backscattering Spectrometry (RBS), ion channeling, and high resolution cross sectional TEM. This technique for producing GexSi1−x alloy layers is insensitive to minor levels of contamination because the original Ge/Si interface is melted through during the laser processing

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 323
Copyright
Copyright © Materials Research Society 1988

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