Hostname: page-component-7bb8b95d7b-qxsvm Total loading time: 0 Render date: 2024-09-11T14:21:43.316Z Has data issue: false hasContentIssue false

Pulsed Laser Deposition of High Tc Superconducting Thin Films: Deposition Physics and in-Situ Processing

Published online by Cambridge University Press:  28 February 2011

Rajiv K. Singh
Affiliation:
Department of Materials Science and Engineering North Carolina State University Raleigh, NC 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering North Carolina State University Raleigh, NC 27695–7916
Get access

Abstract

The pulsed laser evaporation (PLE) technique for deposition of thin films is characterized by a number of unique properties. Based on the experimental characteristics, a theoretical model is developed which considers the formation and anisotropic three dimensional expansion of the laser generated plasma. This model explains most of the experimental features observed in PLE. We have also employed the PLE technique for in-situ fabrication of YBa2Cu3O7 superconducting thin films on different substrates in the temperature range of 500–650°C. At temperatures below 600–C, a biased interposing ring between the substrate and the target was found to significantly improve the superconducting properties. The minimum ion channeling yields were between 3-3.5 % for films deposited on (100) SrTiO3 and (100) LaA1O3 substrates. The films exhibit very high critical current densities (Jc) with maximum values exceeding 6.5 x 106 amps/cm2 for silver doped YBa2Cu3O7 films on (100) LaA1O3 substrates, and the Jc also varies anisotropically with the magnetic field.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Narayan, J., Biunno, N., Singh, R.K et. al., Appl. Phys. Lett. 51,1845 (1987)Google Scholar
2 Roas, B., Schultz, L. and Endres, G. Appl. Phys. Lett. 53, 1557 (1988)Google Scholar
3 Singh, R.K, Narayan, J., et. al, Appl. Phys. lett 54, 2271(1989)Google Scholar
4 Narayan, J., Singh, R.K., Tiwari, P. and Lee, C.B., Appl. Phys. Lett.(in press)Google Scholar
5 Venkatesan, T., et. al., Appl. Phys. Lett. 52, 1193 (1987)Google Scholar
6 Neifeld, R. A., et.al Appl. Phys. Lett. 53, 703, 1988 Google Scholar
7 Singh, R.K., Biunno, N., and Narayan, J., Appl. Phys. Lett., 53, 1013,(1988)Google Scholar
8 Dyer, P. E., Jenkins, S. D., and Sidhu, S., Appl. Phys.Lett. 49, 453, (1988)Google Scholar
9 Singh, R. K. and Narayan, J., Physical Review B (in press)Google Scholar
10 Singh, R. K. and Narayan, J., J. Appl. Phys. (in press)Google Scholar
11 Singh, R.K. and Narayan, J., Mat. Sci. and Engr. B 3, 217 (1989)Google Scholar
12 Ready, J.F., Effects of High Power Laser Radiation, Academic Press,N.Y, 1971 Google Scholar
13 Zel'dovich, and Raizer, , Physics of Shock Waves and High Temperature Phenomena, Academic Press, NY (1966)Google Scholar
14 Hughes, T.P., Plasma and Laser Light, John Wiley, New York, 1975 Google Scholar
15 Singh, R.K. et.al(to be published), L.Ganapathi et.al. (these proceedings)Google Scholar