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Pulsed Laser Evaporation and Epitaxy Growth of Cd1−xMnxTe
Published online by Cambridge University Press: 21 February 2011
Abstract
Epitaxial layers of Cd1−xMnxTe have been grown on CdTe (100) substrates by evaporating a target with a 1.06 µm pulsed laser. The high - quality materials were characterized by photoluminescence spectroscopy (PL) and energy dispersive analysis of x-ray (EDAX). We find that the incorporation of the Mn in the epitaxial layer is about two - thirds of the concentration in the target. A comparison is made to the epitaxial layers grown on CdTe (111) and GaAs (100) substrates.
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- Copyright © Materials Research Society 1990
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